Conduction Mechanisms in Resistance Switching Memory Devices Using Transparent Boron Doped Zinc Oxide Films

Materials

Fu-Chien Chiu¹ 

[1] Department of Electronic Engineering, Ming Chuan University, 5 De-Ming Rd., Gui-Shan, Taoyuan 33348, Taiwan; E-Mail

关键词: boron doped zinc oxide;    resistance switching;    conduction mechanism;    trap spacing;    trap energy level;   

DOI  :  10.3390/ma7117339

来源: mdpi

【 摘 要 】

In this work, metal/oxide/metal capacitors were fabricated and investigated using transparent boron doped zinc oxide (ZnO:B) films for resistance switching memory applications. The optical band gap of ZnO:B films was determined to be about 3.26 eV and the average value of transmittance of ZnO:B films was about 91% in the visible light region. Experimental results indicated that the resistance switching in the W/ZnO:B/W structure is nonpolar. The resistance ratio of high resistance state (HRS) to low resistance state (LRS) is about of the order of 10⁵ at room temperature. According to the temperature dependence of current-voltage characteristics, the conduction mechanism in ZnO:B films is dominated by hopping conduction and Ohmic conduction in HRS and LRS, respectively. Therefore, trap spacing (1.2 nm) and trap energy levels in ZnO:B films could be obtained.

【 授权许可】

CC BY   
© 2014 by the authors; licensee MDPI, Basel, Switzerland.