Role of Cl on Diffusion of Cu in In2S3 Layers Prepared by Ion Layer Gas Reaction Method

Coatings

Henry Wafula³  Musembi Robinson¹  Albert Juma²  Thomas Sakwa³  Manasse Kitui³  Rodrigo Araoz²  Christian-H. Fischer² 

[1] Department of Physics, University of Nairobi, Nairobi-30197, Kenya; E-Mail:;Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany; E-Mails:;Physics Department, Masinde Muliro University of Science and Technology, Kakamega-50100, Kenya; E-Mails:

关键词: diffusion;    ILGAR;    In₂S₃;    CuSCN;   

DOI  :  10.3390/coatings5010054

来源: mdpi

【 摘 要 】

Ion layer gas reaction (ILGAR) method allows for deposition of Cl-containing and Cl-free In₂S₃ layers from InCl₃ and In(OCCH₃CHOCCH₃)₃ precursor salts, respectively. A comparative study was performed to investigate the role of Cl on the diffusion of Cu from CuSCN source layer into ILGAR deposited In₂S₃ layers. The Cl concentration was varied between 7 and 14 at.% by varying deposition parameters. The activation energies and exponential pre-factors for Cu diffusion in Cl-containing samples were between 0.70 to 0.78 eV and between 6.0 × 10⁻⁶ and 3.2 × 10⁻⁵ cm²/s. The activation energy in Cl-free ILGAR In₂S₃ layers was about three times less compared to the Cl-containing In₂S₃, and the pre-exponential constant six orders of magnitude lower. These values were comparable to those obtained from thermally evaporated In₂S₃ layers. The residual Cl-occupies S sites in the In₂S₃ structure leading to non-stoichiometry and hence different diffusion mechanism for Cu compared to stoichiometric Cl-free layers.

【 授权许可】

CC BY   
© 2015 by the authors; licensee MDPI, Basel, Switzerland.