Material Exchange Property of Organo Lead Halide Perovskite with Hole-Transporting Materials

Photonics

Seigo Ito¹  Shusaku Kanaya¹  Hitoshi Nishino³  Tomokazu Umeyama² 

[1] Department of Materials and Synchrotron Radiation Engineering, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo, 671-2201, Japan; E-Mail:;Department of Molecular Engineering, Graduate School of Engineering, Kyoto University, Kyoto 615-8510, Japan; E-Mails:;Energy Technology Laboratories, Osaka Gas Co., Ltd., Osaka 554-0051, Japan; E-Mail:

关键词: CuSCN;    cupper thiocyanate;    inter diffusion;    stability;    material exchanging;   

DOI  :  10.3390/photonics2041043

来源: mdpi

【 摘 要 】

Using X-ray diffraction (XRD), it was confirmed that the deposition of hole-transporting materials (HTM) on a CH₃NH₃PbI₃ perovskite layer changed the CH₃NH₃PbI₃ perovskite crystal, which was due to the material exchanging phenomena between the CH₃NH₃PbI₃ perovskite and HTM layers. The solvent for HTM also changed the perovskite crystal. In order to suppress the crystal change, doping by chloride ion, bromide ion and 5-aminovaleric acid was attempted. However, the doping was unable to stabilize the perovskite crystal against HTM deposition. It can be concluded that the CH₃NH₃PbI₃ perovskite crystal is too soft and flexible to stabilize against HTM deposition.

【 授权许可】

CC BY   
© 2015 by the authors; licensee MDPI, Basel, Switzerland.