A CMOS Pressure Sensor Tag Chip for Passive Wireless Applications

Sensors

Fangming Deng²  Yigang He¹  Bing Li¹  Lei Zuo¹  Xiang Wu²  Zhihui Fu² 

[1] School of Electrical Engineering and Automation, Hefei University of Technology, Hefei 230009, China; E-Mails:;School of Electrical and Electronic Engineering, East China Jiao Tong University, Nanchang 330013, China; E-Mails:

关键词: pressure sensor;    RFID technology;    CMOS process;    capacitive sensor interface;    rectifier;   

DOI  :  10.3390/s150306872

来源: mdpi

【 摘 要 】

This paper presents a novel monolithic pressure sensor tag for passive wireless applications. The proposed pressure sensor tag is based on an ultra-high frequency RFID system. The pressure sensor element is implemented in the 0.18 µm CMOS process and the membrane gap is formed by sacrificial layer release, resulting in a sensitivity of 1.2 fF/kPa within the range from 0 to 600 kPa. A three-stage rectifier adopts a chain of auxiliary floating rectifier cells to boost the gate voltage of the switching transistors, resulting in a power conversion efficiency of 53% at the low input power of −20 dBm. The capacitive sensor interface, using phase-locked loop archietcture, employs fully-digital blocks, which results in a 7.4 bits resolution and 0.8 µW power dissipation at 0.8 V supply voltage. The proposed passive wireless pressure sensor tag costs a total 3.2 µW power dissipation.

【 授权许可】

CC BY   
© 2015 by the authors; licensee MDPI, Basel, Switzerland.