Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Concave Patterned Sapphire Substrate

Materials

YewChung Sermon Wu¹  A. Panimaya Selvi Isabel²  Jian-Hsuan Zheng²  Bo-Wen Lin²  Jhen-Hong Li²  Chia-Chen Lin² 

[1] Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan;

关键词: GaN-based LED;    concave patterned sapphire substrate;    crystal quality;    light output power;   

DOI  :  10.3390/ma8041993

来源: mdpi

【 摘 要 】

The crystal quality and light output power of GaN-based light-emitting diodes (LEDs) grown on concave patterned sapphire substrate (CPSS) were investigated. It was found that the crystal quality of GaN-based LEDs grown on CPSS improved with the decrease of the pattern space (percentage of c-plane). However, when the pattern space decreased to 0.41 μm (S0.41-GaN), the GaN crystallinity dropped. On the other hand, the light output power of GaN-based LEDs was increased with the decrease of the pattern space due to the change of the light extraction efficiency.

【 授权许可】

CC BY   
© 2015 by the authors; licensee MDPI, Basel, Switzerland.