Design of 340 GHz 2× and 4× Sub-Harmonic Mixers Using Schottky Barrier Diodes in Silicon-Based Technology

Micromachines

Chao Liu²  Qiang Li²  Yihu Li¹  Xiang Li¹  Haitao Liu¹  Yong-Zhong Xiong¹ 

[1] Semiconductor Device Research Laboratory, Terahertz Research Centre, CAEP, Chengdu 611731, China; E-Mail:;School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China; E-Mail:

关键词: terahertz mixer;    APDP;    SHM;    Schottky barrier diode;   

DOI  :  10.3390/mi6050592

来源: mdpi

【 摘 要 】

This paper presents the design of terahertz 2× and 4× sub-harmonic down-mixers using Schottky Barrier Diodes fabricated in standard 0.13 μm SiGe BiCMOS technology. The 340 GHz sub-harmonic mixers (SHMs) are designed based on anti-parallel-diode-pairs (APDPs). With the 2nd and 4th harmonic, local oscillator (LO) frequencies of 170 GHz and 85 GHz are used to pump the two 340 GHz SHMs. With LO power of 7 dBm, the 2× SHM exhibits a conversion loss of 34.5–37 dB in the lower band (320–340 GHz) and 35.5–41 dB in the upper band (340–360 GHz); with LO power of 9 dBm, the 4× SHM exhibits a conversion loss of 39–43 dB in the lower band (320–340 GHz) and 40–48 dB in the upper band (340–360 GHz). The measured input 1-dB conversion gain compression point for the 2× and 4× SHMs are −8 dBm and −10 dBm at 325 GHz, respectively. The simulated LO-IF (intermediate frequency) isolation of the 2× SHM is 21.5 dB, and the measured LO-IF isolation of the 4× SHM is 32 dB. The chip areas of the 2× and 4× SHMs are 330 μm × 580 μm and 550 μm × 610 μm, respectively, including the testing pads.

【 授权许可】

CC BY   
© 2015 by the authors; licensee MDPI, Basel, Switzerland.