Modeling and Analysis of Entropy Generation in Light Heating of Nanoscaled Silicon and Germanium Thin Films

Entropy

José Ernesto Nájera-Carpio¹  Federico Vázquez²  Aldo Figueroa²  Morin Celine³  Bernard Desmet³ 

[1] Instituto de Energías Renovables, Universidad Nacional Autónoma de México, Privada de Xochicalco S/N, Temixco 62588, Morelos, Mexico; E-Mail:;Centro de Investigación en Ciencias, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, Col. Chamilpa, Cuernavaca 62209, Morelos, Mexico; E-Mail:;Instituto de Energías Renovables, Universidad Nacional Autónoma de México, Privada de Xochicalco S/N, Temixco 62588, Morelos, Mexico; E-Mail

关键词: thin films;    entropy production;    heat transport;    electron-hole generation;    light matter interaction;    irreversible processes;    semiconductors;   

DOI  :  10.3390/e17074786

来源: mdpi

【 摘 要 】

In this work, the irreversible processes in light heating of Silicon (Si) and Germanium (Ge) thin films are examined. Each film is exposed to light irradiation with radiative and convective boundary conditions. Heat, electron and hole transport and generation-recombination processes of electron-hole pairs are studied in terms of a phenomenological model obtained from basic principles of irreversible thermodynamics. We present an analysis of the contributions to the entropy production in the stationary state due to the dissipative effects associated with electron and hole transport, generation-recombination of electron-hole pairs as well as heat transport. The most significant contribution to the entropy production comes from the interaction of light with the medium in both Si and Ge. This interaction includes two processes, namely, the generation of electron-hole pairs and the transferring of energy from the absorbed light to the lattice. In Si the following contribution in magnitude comes from the heat transport. In Ge all the remaining contributions to entropy production have nearly the same order of magnitude. The results are compared and explained addressing the differences in the magnitude of the thermodynamic forces, Onsager’s coefficients and transport properties of Si and Ge.

【 授权许可】

CC BY   
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