High-Temperature Dielectric Properties of Aluminum Nitride Ceramic for Wireless Passive Sensing Applications

Sensors

Jun Liu¹  Yukun Yuan¹  Zhong Ren¹  Qiulin Tan¹  Jijun Xiong¹ 

[1] Science and Technology on Electronic Test & Measurement Laboratory, North University of China, Taiyuan 030051, China; E-Mails:

关键词: wireless passive;    aluminum nitride ceramic;    LC resonator;    dielectric properties;    high temperature;    quality factor;   

DOI  :  10.3390/s150922660

来源: mdpi

【 摘 要 】

The accurate characterization of the temperature-dependent permittivity of aluminum nitride (AlN) ceramic is quite critical to the application of wireless passive sensors for harsh environments. Since the change of the temperature-dependent permittivity will vary the ceramic-based capacitance, which can be converted into the change of the resonant frequency, an LC resonator, based on AlN ceramic, is prepared by the thick film technology. The dielectric properties of AlN ceramic are measured by the wireless coupling method, and discussed within the temperature range of 12 °C (room temperature) to 600 °C. The results show that the extracted relative permittivity of ceramic at room temperature is 2.3% higher than the nominal value of 9, and increases from 9.21 to 10.79, and the quality factor Q is decreased from 29.77 at room temperature to 3.61 at 600 °C within the temperature range.

【 授权许可】

CC BY   
© 2015 by the authors; licensee MDPI, Basel, Switzerland.