Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

Materials

Jaekyun Kim²  Chang Jun Park¹  Gyeongmin Yi¹  Myung-Seok Choi³  Sung Kyu Park¹ 

[1] School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756, Korea;Department of Applied Materials Engineering, Hanbat National University, Daejeon 305-719, Korea;;Department of Materials Chemistry and Engineering, Konkuk University, Seoul 143-701, Korea

关键词: organic thin film transistor;    gate dielectric layer;    self-assembled monolayer;    photochemical activation;    low-temperature sol-gel method;    low-voltage operation;   

DOI  :  10.3390/ma8105352

来源: mdpi

【 摘 要 】

A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT) was demonstrated. Photochemical activation of sol-gel-derived AlO_x films under 150 °C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost comparable to the results yielded by the conventionally used vacuum deposition and high temperature annealing method. Octadecylphosphonic acid (ODPA) self-assembled monolayer (SAM) treatment of the AlO_x was employed in order to realize high-performance (>0.4 cm²/Vs saturation mobility) and low-operation-voltage (<5 V) diketopyrrolopyrrole (DPP)-based OTFTs on an ultra-thin polyimide film (3-μm thick). Thus, low-temperature photochemically-annealed solution-processed AlO_x film with SAM layer is an attractive candidate as a dielectric-layer for use in high-performance organic TFTs operated at low voltages.

【 授权许可】

CC BY   
© 2015 by the authors; licensee MDPI, Basel, Switzerland.