Nanomaterials | |
Effects of Annealing Temperature on Properties of Ti-Ga–Doped ZnO Films Deposited on Flexible Substrates | |
Tao-Hsing Chen1  Ting-You Chen2  Ming-Tsang Lee2  | |
[1] Department of Mechanical Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung City 807, Taiwan; E-Mail | |
关键词: annealing temperature effect; Ti-Ga; flexible substrate; polyimide; | |
DOI : 10.3390/nano5041831 | |
来源: mdpi | |
【 摘 要 】
An investigation is performed into the optical, electrical, and microstructural properties of Ti-Ga–doped ZnO films deposited on polyimide (PI) flexible substrates and then annealed at temperatures of 300 °C, 400 °C, and 450 °C, respectively. The X-ray diffraction (XRD) analysis results show that all of the films have a strong (002) Ga doped ZnO (GZO) preferential orientation. As the annealing temperature is increased to 400 °C, the optical transmittance increases and the electrical resistivity decreases. However, as the temperature is further increased to 450 °C, the transmittance reduces and the resistivity increases due to a carbonization of the PI substrate. Finally, the crystallinity of the ZnO film improves with an increasing annealing temperature only up to 400 °C and is accompanied by a smaller crystallite size and a lower surface roughness.
【 授权许可】
CC BY
© 2015 by the authors; licensee MDPI, Basel, Switzerland.
【 预 览 】
Files | Size | Format | View |
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RO202003190004281ZK.pdf | 2348KB | download |