Effects of Annealing Temperature on Properties of Ti-Ga–Doped ZnO Films Deposited on Flexible Substrates

Nanomaterials

Tao-Hsing Chen¹  Ting-You Chen²  Ming-Tsang Lee² 

[1] Department of Mechanical Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung City 807, Taiwan; E-Mail

关键词: annealing temperature effect;    Ti-Ga;    flexible substrate;    polyimide;   

DOI  :  10.3390/nano5041831

来源: mdpi

【 摘 要 】

An investigation is performed into the optical, electrical, and microstructural properties of Ti-Ga–doped ZnO films deposited on polyimide (PI) flexible substrates and then annealed at temperatures of 300 °C, 400 °C, and 450 °C, respectively. The X-ray diffraction (XRD) analysis results show that all of the films have a strong (002) Ga doped ZnO (GZO) preferential orientation. As the annealing temperature is increased to 400 °C, the optical transmittance increases and the electrical resistivity decreases. However, as the temperature is further increased to 450 °C, the transmittance reduces and the resistivity increases due to a carbonization of the PI substrate. Finally, the crystallinity of the ZnO film improves with an increasing annealing temperature only up to 400 °C and is accompanied by a smaller crystallite size and a lower surface roughness.

【 授权许可】

CC BY   
© 2015 by the authors; licensee MDPI, Basel, Switzerland.