Schottky photodiode using submicron thick diamond epilayer for flame sensing

Nano-Micro Letters

K. Sueishi and F. Yoshifusa¹  J. Alvarez¹  M. Y. Liao1¹  M. Imura¹  Y. Koide¹ 

关键词: Flame sensing;    Boron-doped diamond;    Schottky photodiode;   

DOI  :  10.5101/nml.v1i1.p30-33

来源: Open Access House of Science and Technology

【 摘 要 】

Thesensingofaflamecanbeperformedbyusingwide-bandgapsemiconductors,whichofferahighsignal-to-noiseratiosincetheyonlyresponsetheultravioletemissionintheflame.Diamondisarobustsemiconductorwithawide-bandgapof5.5eV,exhibitinganintrinsicsolar-blindnessfordeep-ultraviolet(DUV)detection.Inthiswork,byusingasubmicronthickboron-dopeddiamondepilayergrownonatype-Ibdiamondsubstrate,aSchottkyphotodiodedevicestructure-basedflamesensorisdemonstrated.Thephotodiodeexhibitsextremelylowdarkcurrentinbothforwardandreversemodesduetotheholesdepletionintheepilayer.Thephotodiodehasaphotoconductivitygainlargerthan100andathresholdwavelengthof330nmintheforwardbiasmode.COandOHemissionbandswithwavelengthsshorterthan330nminaflamelightaredetectedataforwardvoltageof-10V.Analcohollampflameinthedistanceof250mmisdirectlydetectedwithoutafocusinglensofflamelight.

【 授权许可】

Unknown