The Analysis Of Accuracy Of Selected Methods Of Measuring The Thermal Resistance Of IGBTs

Metrology and Measurement Systems

Paweł Górecki¹  Krzysztof Górecki¹ 

关键词: IGBT;    thermal resistance;    measurements;    transistor;    semiconductor devices;   

DOI  :  10.1515/mms-2015-0036

来源: Versita

【 摘 要 】

In the paper selected methods of measuring the thermal resistance of an IGBT (Insulated Gate Bipolar Transistor) are presented and the accuracy of these methods is analysed. The analysis of the measurement error is performed and operating conditions of the considered device, at which each measurement method assures the least measuring error, are pointed out. Theoretical considerations are illustrated with some results of measurements and calculations.

【 授权许可】

Unknown