Design of a Multi-Wafer Reactor for Supercritical Fluid Deposition of Cu in Mass Production: (1) Reaction Mechanism and Kinetics

JOURNAL OF CHEMICAL ENGINEERING OF JAPAN

Takeshi Momose³  Yukihiro Shimogaki³  Eiichi Kondoh¹  Masakazu Sugiyama² 

[1] Department of Mechanical System Engineering, University of Yamanashi;Department of Electrical Engineering and Information Systems, The University of Tokyo;Department of Materials Engineering, The University of Tokyo

关键词: Deposition;    Supercritical Fluid;    Cu;    Reactor Design;   

DOI  :  10.1252/jcej.13we225

来源: Maruzen Company Ltd

【 摘 要 】

References(31)Cited-By(3)The feasibility of a wafer-scale reactor for supercritical fluid deposition (SCFD) has been evaluated in a series of papers for mass production of Cu interconnects in ultra-large-scale integration (ULSI) based on two criteria: reactor throughput and film thickness uniformity on 12-inch wafers. This study experimentally extracts the reaction kinetics and transport properties of the source precursor within SCFD using a lab-scale flow reactor. The dependence of the growth rate (GR) on the source precursor and by-product (ligand of the precursor) concentrations was investigated. The source precursor exhibited Langmuir–Hinshelwood (LH) reaction kinetics, while increased by-product concentrations resulted in decreased GRs. The diffusion coefficient (D) of the source precursor under SCFD conditions was estimated using macrocavity analysis, and D was found to be approximately 10−7 m2/s. The obtained kinetic information will be used to design a mass production-scale reactor for SCFD of Cu (Cu-SCFD).

【 授权许可】

Unknown