Growth Chemistry and Interface Characterization of Single Crystal SiC on Modified Si Surface

JOURNAL OF CHEMICAL ENGINEERING OF JAPAN

YEONG SEOK YANG³  KEE YOUNG LIM¹  YOUNG HUN SEO⁴  KEE SUK NAHM²  CHAN IL PARK¹  KWANG CHUL KIM¹ 

[1] Department of Semiconductor Science and Technology, Chonbuk National University;School of Chemical Engineering and Technology, Chonbuk National University;Department of Chemical Engineering, Woosuk University;Anam Semiconductor Co. Ltd.

关键词: SiC Growth;    Nitridation;    Tetramethylsilane;    Mass spectrum;    Kinetics;   

DOI  :  10.1252/jcej.34.692

来源: Maruzen Company Ltd

【 摘 要 】

References(34)Cited-By(5)Crystalline 3C-SiC films were grown on Si substrate whose surface has been modified with SiNx by NH3 nitridation and their qualities were examined. The growth rate of 3C-SiC film increased with the increase of tetramethysilane (TMS) partial pressure. The growth reaction of 3C-SiC film was the 1st order with respect to TMS partial pressure. When SiC films were grown on pure Si surface, voids were observed in the silicon side of the SiC/Si interface. But void-free SiC films with a flat and smooth film/substrate interface were grown on 60-min nitrided Si surfaces. Crystal quality of 3C-SiC grown on the nitrided Si substrate was better than that on pure Si. The growth mechanism of 3C-SiC films on the nitrided Si substrate was discussed in detail in this work.

【 授权许可】

Unknown