Fabrication of silicon and carbon based wide-gap semiconductor thin films for high conversion efficiency

11th Asia Pacific Conference on Plasma Science and Technology;25th Symposium on Plasma Science for Materials

Yoshinaga, Kohsuke^1 ; Naragino, Hiroshi^1 ; Nakahara, Akira^1 ; Honda, Kensuke^1

Graduate School of Science and Engineering, Yamaguchi University, 1677-1, Yoshida, Yamaguchi-shi, Yamaguchi, 753-8512, Japan^1

关键词: Chemical compositions;    High conversion efficiency;    Multi-phase structures;    Photocurrent measurement;    Radio frequency plasma-enhanced chemical vapor depositions;    SiC thin films;    Tetramethylsilane;    Wide-gap semiconductor;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/441/1/012040/pdf
DOI  :  10.1088/1742-6596/441/1/012040

来源: IOP

【 摘 要 】

Nitrogen doped amorphous silicon carbide (N-doped a-SiC) thin films were fabricated by radio frequency plasma enhanced chemical vapor deposition (RF-PeCVD) method using mixed solution of tetramethylsilane (TES) and 1,1,1,3,3,3-hexamethyldisilazane (HMDS) as a liquid source. Chemical composition of N-doped a-SiC thin film was Si:C 1:4 and sp2-bonded carbon ratio was 0.75. N-doped DLC were multi-phase structure including a-SiC phase, sp2clusters and a-Si clusters. Optical gap and resistivity of the film were 1.68 eV and 4.32×104Ω cm, respectively. From photocurrent measurement under UV exposure, it was clarified that the film functioned as n-type semiconductor materials with 4.87 % of quantum yield, which was on the same level as that obtained at anatase-type titanium oxide prepared by sol-gel method. To apply these films to solar cells, further improvements of optical gap and conductivity are necessary.