| Pramana | |
| Enhancement in the gain recovery of a semiconductor optical amplifier by device temperature control | |
| YOGESH KUMAR11  M R SHENOY1  | |
| [1] Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, Delhi 110 016, India$$ | |
| 关键词: Semiconductor optical amplifier; gain recovery; assisted-light; optical-pumping-near-transparency.; | |
| DOI : | |
| 学科分类:物理(综合) | |
| 来源: Indian Academy of Sciences | |
PDF
|
|
【 摘 要 】
We present a numerical investigation on the temperature dependence of gain recovery, of a semiconductor optical amplifier (SOA). It is shown that the decrease in temperature significantly speed-up the gain recovery of the SOA. Under typical operating conditions, a 20 K reduction in temperature of the SOA results in a decrease of 150 ps in the gain recovery time. A comparative estimation of device temperature and assisted-light power requirements for enhancing the gain recovery has also been carried out. It is found that, a decrease of 8 K in the temperature of the SOA, is as effective in enhancing the gain recovery as injection of 25 dBm assistedlight power in the counter-propagating mode. Our study shows that under moderate current biasing conditions, temperature reduction is a better and convenient option to speed-up the gain recovery of an SOA, than the use of external assisted-light injection, which requires an additional laser source and wavelength division multiplexing(WDM) components for coupling and de-coupling, leading to insertion losses in the communication channel.
【 授权许可】
Unknown
【 预 览 】
| Files | Size | Format | View |
|---|---|---|---|
| RO201912040499470ZK.pdf | 130KB |
PDF