A comparative study of the density of defect states in bulk samples and thin films of glassy Se$_{90}$Sb$_{10}$

Pramana

KUMAR A1¹  SHUKLA R K¹  KUMAR ANJANI¹  DWIVEDI PRABHAT K² 

[1] Department of Physics, Harcourt Butler Technological Institute, Kanpur 208 002, India$$;Centre for Nanosciences, Indian Institute of Technology, Kanpur 208 016, India$$

关键词: Chalcogenide glasses;    localized states;    space-charge-limited conduction;    density of defect states.;   

DOI  :  

学科分类：物理（综合）

来源: Indian Academy of Sciences

【 摘 要 】

The present paper reports the comparative study of density of defect states (DOS) between bulk samples and thin films of glassy Se$_{90}$Sb$_{10}$. These glasses have been prepared by the quenching technique. Thin films of these glasses have been prepared by vacuum evaporation technique. Space-charge-limited conduction (SCLC) has been measured at different temperatures.The density of localized states near Fermi level is calculated by fitting the data to the theory of SCLC for the case of uniform distribution of localized states for bulk as well as for thin films. A comparison has been made between the density of states calculated in these two cases.

【 授权许可】

Unknown