Study of electrical properties of glassy Se100â€�?�ð�?�¥Teð‘�? alloys

Bulletin of materials science

A Kumar¹  A Dwivedi³  N Mehta¹  R Arora³  S Kumar² 

[1] Department of Physics, Harcourt Butler Technological Institute, Kanpur 208 002, India$$Department of Physics, Harcourt Butler Technological Institute, Kanpur 208 002, IndiaDepartment of Physics, Harcourt Butler Technological Institute, Kanpur 208 002, India$$;Department of Physics, Christ Church College, Kanpur 208 001, India$$Department of Physics, Christ Church College, Kanpur 208 001, IndiaDepartment of Physics, Christ Church College, Kanpur 208 001, India$$;Department of Physics, P.P.N. College, Kanpur 208 001, India$$Department of Physics, P.P.N. College, Kanpur 208 001, IndiaDepartment of Physics, P.P.N. College, Kanpur 208 001, India$$

关键词: Chalcogenide glasses;    hopping conduction;    density of defect states.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Temperature and frequency dependence of a.c. conductivity have been studied in glassy Se_{100�?����?}Te_�? (�? = 10, 20 and 30) over different range of temperatures and frequencies. An agreement between experimental and theoretical results suggests that the a.c. conductivity behaviour of selenium�?�tellurium system (Se_{100�?����?}Te_�?) can be successfully explained by correlated barrier hopping (CBH) model. The density of defect states has been determined using this model for all the glassy alloys.

【 授权许可】

Unknown