Impact of oxide thickness on gate capacitance – Modelling and comparative analysis of GaN-based MOSHEMTs

Pramana

Raghunandan Swain¹  T R Lenka1¹  Kanjalochan Jena¹ 

[1] Department of Electronics and Communication Engineering, National Institute of Technology, Silchar 788 010, India$$

关键词: Two-dimensional electron gas;    GaN;    metal oxide semiconductor high electron mobility transistor;    quantum capacitance;    TCAD.;   

DOI  :  

学科分类：物理（综合）

来源: Indian Academy of Sciences

【 摘 要 】

In this paper, we have developed a mathematical model to predict the behaviour of gate capacitance and threshold voltage with nanoscale variation of oxide thickness in AlInN/GaN and AlGaN/GaN metal oxide semiconductor high electron mobility transistor (MOSHEMT). The results obtained from the model are compared with the TCAD simulation results to validate the model. It is observed that AlInN/GaN MOSHEMT has an advantage of significant decrease in gate capacitance up to 0.0079 pF/𝜇m2 with increase in oxide thickness up to 5 nm as compared to conventional AlGaN/GaN MOSHEMT. This decrease in gate capacitance in AlInN/GaN MOSHEMT reduces the propagation delay and hence improves the RF performance of the device.

【 授权许可】

Unknown