Thickness dependence of the structural and electrical properties of ZnO thermal-evaporated thin films

Pramana

M Ahmadirad³  S Bahrami⁴  S Solaymani¹  S M Elahi⁵  M Naseri²  A E Khalili⁴  A Ghaderi1⁴ 

[1]Young Researchers Club, Kermanshah Branch, Islamic Azad University, Kermanshah, Iran$$

[2]Department of Physics, Islamic Azad University, Kermanshah Branch, Kermanshah, Iran$$

[3]Institute for Research of Fundamental Science (IPM), Tehran, Iran$$

[4]Department of Physics, Islamic Azad University-Tehran Central Branch, Tehran, Iran$$

[5]Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran, Iran$$

关键词: Zinc oxide thin film;    thermal evaporation;    X-ray diffraction;    atomic force microscope;    electrical conductivity.;   

DOI  :  

学科分类：物理（综合）

来源: Indian Academy of Sciences

【 摘 要 】

ZnO thin films of different thicknesses were prepared by thermal evaporation on glass substrates at room temperature. Deposition process was carried out in a vapour pressure of about 5.54 × 10-5 mbar. The substrate–target distance was kept constant during the process. By XRD and AFM techniques the microstructural characteristics and their changes with variation in thickness were studied. Electrical resistivity and conductivity of samples vs. temperature were investigated by four-probe method. It was shown that an increase in thickness causes a decrease in activation energy.

【 授权许可】

Unknown