Characterization of GaN/AlGaN epitaxial layers grown by metalorganic chemical vapour deposition for high electron mobility transistor applications

Pramana

D Kumar²  Bhubesh Chander Joshi1¹  Manish Mathew¹  B C Joshi¹  C Dhanavantri¹ 

[1] Optoelectronic Devices Group, Central Electronics Engineering Research Institute, CEERI (Council of Scientific and Industrial Research, CSIR), Pilani, 333 031 India$$;Electronic Science Department, Kurukshetra University, Kurukshetra, India$$

关键词: Gallium nitride;    aluminium gallium nitride;    high electron mobility transistors;    metalorganic chemical vapour deposition;    photoluminescence;    high resolution X-ray diffraction.;   

DOI  :  

学科分类：物理（综合）

来源: Indian Academy of Sciences

【 摘 要 】

GaN and AlGaN epitaxial layers are grown by a metalorganic chemical vapour deposition (MOCVD) system. The crystalline quality of these epitaxially grown layers is studied by different characterization techniques. PL measurements indicate band edge emission peak at 363.8 nm and 312 nm for GaN and AlGaN layers respectively. High resolution XRD (HRXRD) peaks show FWHM of 272 and 296 arcsec for the (0 0 0 2) plane of GaN and GaN in GaN/AlGaN respectively. For GaN buffer layer, the Hall mobility is 346 cm2/V-s and carrier concentration is 4.5 × 1016 /cm3. AFM studies on GaN buffer layer show a dislocation density of 2 × 108/cm2 by wet etching in hot phosphoric acid. The refractive indices of GaN buffer layer on sapphire at 633 nm are 2.3544 and 2.1515 for TE and TM modes respectively.

【 授权许可】

Unknown