Silicon detector technology development in India for the participation in international experiments

Pramana

Anita Topkar1¹  S K Kataria¹  S Praveenkumar¹  M D Ghodgaonkar¹  Bharti Aggarwal¹ 

[1] Bhabha Atomic Research Centre, Trombay, Mumbai 400 080, India$$

关键词: CMS;    silicon strip detectors;    silicon sensors;    detector technology;   

DOI  :  

学科分类：物理（综合）

来源: Indian Academy of Sciences

【 摘 要 】

A specific research and development program has been carried out by BARC in India to develop the technology for large area silicon strip detectors for application in nuclear and high energy physics experiments. These strip detectors will be used as pre-shower detector in the CMS experiment at LHC, CERN for 𝜋0/𝜆 rejection. The fabrication technology to produce silicon strip detectors with very good uniformity over a large area of ∼ 40 cm2, low leakage currents of the order of 10 nA/cm2 per strip and high breakdown voltage of >500 V has been developed by BARC. The production of detectors is already under way to deliver 1000 detector modules for the CMS and 90% production is completed. In this paper, research and development work carried out to develop the detector fabrication technology is briefly described. The performance of the silicon strip detectors produced in India is presented. The present status of the detector technology is discussed.

【 授权许可】

Unknown