Frequency dependence of junction capacitance of BPW34 and BPW41 p-i-n photodiodes

Pramana

Åžadan Özden¹  Habibe Bayhan1¹ 

[1] Physics Department, Faculty of Art and Science, University of MuÄŸla, 48000 MuÄŸla, Turkey$$

关键词: BPW34;    BPW41;    p-i-n;    capacitance;    frequency dependence.;   

DOI  :  

学科分类：物理（综合）

来源: Indian Academy of Sciences

【 摘 要 】

This article investigates the frequency dependence of small-signal capacitance of silicon BPW34 and BPW41 (Vishay) p-i-n photodiodes. We show that the capacitance-frequency characteristics of these photodiodes are well-described by the Schibli and Milnes model. The activation energy and the concentration of the dominant trap levels detected in BPW34 and BPW41 are 280{330 meV and 1.1 × 1012 - 1.2 × 1012 cm-3, respectively. According to the high-frequency 𝐶-𝑉 measurements, the impurity concentrations are determined to be about 5.3 × 1012 and 1.9 × 1013 cm-3 in BPW41 and BPW34, respectively using the method of 𝛥 𝑉/ 𝛥 (𝐶-2) vs. 𝐶.

【 授权许可】

Unknown