Electrical transport in La1-𝑥Ca𝑥MnO3 thin films at low temperatures

Pramana

G Rangarajan¹  S Angappane¹  K Sethupathi¹ 

[1] Physics Department, Low Temperature Laboratory, Indian Institute of Technology, Chennai 600 036, India$$

关键词: La1-𝑥Ca𝑥MnO3 thin films;    electrical transport;    low temperature resistivity;    colossal magnetoresistance.;   

DOI  :  

学科分类：物理（综合）

来源: Indian Academy of Sciences

【 摘 要 】

We report here the low-temperature resistivity of the chemical solution deposited La1-𝑥Ca𝑥MnO3 (𝑥 = 0.2, 0.3 and 0.33) thin films on LaAlO3 substrates. The films were postannealed in atmosphere at 850°C. The low-temperature resistivity data has been studied in order to understand the nature of low-temperature conduction processes. The data showed 𝑇2 dependence from 60 K to 120 K consistent with the single magnon scattering process. The deviation from this quadratic temperature dependence at low temperatures is attributed to the collapse of the minority spin band. The two-magnon and electron–phonon processes contribute to scattering of carriers in the temperature range above 120 K.

【 授权许可】

Unknown