Role of spin polarized tunneling in magnetoresistance and low temperature minimum of polycrystalline La1â€�?�ð�?�¥K𝑥MnO3 (ð‘�? = 0.05, 0.1, 0.15) prepared by pyrophoric method

Bulletin of materials science

T K Dey¹  Soma Das¹ 

[1] Cryogenic Engineering Centre, Indian Institute of Technology, Kharagpur 721 302, India$$Cryogenic Engineering Centre, Indian Institute of Technology, Kharagpur 721 302, IndiaCryogenic Engineering Centre, Indian Institute of Technology, Kharagpur 721 302, India$$

关键词: Manganites;    magnetoresistance;    low temperature resistivity;    spin polarized tunneling.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

The low temperature resistivity and magnetoresistance of bulk samples of La_{1â€�?�ð�?��?}K_ð‘�?MnO₃ has been investigated between 10 K and 300 K with and without the magnetic field (𝐻 = 0.8 T). All the samples show metalâ€�?�insulator transitions with Curie temperature (ð‘�??_C) ranging between 260 K and 309 K. At temperature below 60 K, the K-doped manganites exhibit a shallow minimum, which disappears under an applied field of 0.8 T. This field dependent minimum in resistivity, observed in K-doped lanthanum manganites is explained in the light of intergrain tunneling of the charge carriers between anti-ferromagnetically coupled grains of the polycrystalline samples. The field variation of magnetoresistance below ð‘�??_C follows a phenomenological model which considers spin polarized tunneling at the grain boundaries. The intergranular contribution to the magnetoresistance is separated out from that due to spin polarized tunneling part at the grain boundaries. The temperature dependence of intrinsic contribution to the magnetoresistance follows the prediction of the double exchange model for all values of field at ð‘�??<ð‘�??_C.

【 授权许可】

Unknown