Growth Characteristics of Amorphous Silicon Oxide Nanowires Synthesized via Annealing of Ni/SiO2/Si Substrates

Bulletin of the Korean chemical society

Ki Won Kim¹  Jong Keun Ha¹  Hye Sung Kim¹  Kwon Koo Cho¹  Kwang Sun Ryu¹ 

关键词: Silicon oxide;    Nanowires;    Solid-Liquid-Solid;    Vapor-Liquid-Solid;    Growth behavior;   

DOI  :  

学科分类：化学（综合）

来源: Korean Chemical Society

【 摘 要 】

In this work, we investigate the growth behavior of silicon oxide nanowires via a solid-liquid-solid process. Silicon oxide nanowires were synthesized at 1000 oC in an Ar and H2 mixed gas. A pre-oxidized silicon wafer and a nickel film are used as the substrate and catalyst, respectively. We propose two distinctive growth modes for the silicon oxide nanowires that both act as a unique solid-liquid-solid growth process. We named the two growth mechanisms “grounded-growth” and “branched-growth” modes to characterize their unique solidliquid- solid growth behavior. The two growth modes were classified by the generation site of the nanowires. The grounded-growth mode in which the grown nanowires are generated from the substrate and the branchedgrowth mode where the nanowires are grown from the side of the previously grown nanowires or at the metal catalyst drop attached at the tip of the nanowire stem.

【 授权许可】

Unknown