Orientations of Polycrystalline ZnO at the Buried Interface of Oxide Thin Film Transistors (TFTs): A Grazing Incidence X-ray Diffraction Study

Bulletin of the Korean chemical society

S.-Y. Choi¹  C. Park¹  S.-H. Ko Park¹  J.-Y. Choi¹  H. Y. Jeong¹  J. Y. Kim¹  S.-H. Han¹  T. H. Yoon¹ 

关键词: Grazing-incidence x-ray diffraction;    ZnO;    Thin film transistors;   

DOI  :  

学科分类：化学（综合）

来源: Korean Chemical Society

【 授权许可】

Unknown