Nanoscaled In$_2$O$_3$:Sn films as material for thermoelectric conversion: achievements and limitations

Bulletin of materials science

V BRINZARI¹  B K CHO²  G KOROTCENKOV² 

[1] Department of Theoretical Physics, State University of Moldova, Chisinau, Republic of Moldova$$Department of Theoretical Physics, State University of Moldova, Chisinau, Republic of MoldovaDepartment of Theoretical Physics, State University of Moldova, Chisinau, Republic of Moldova$$;School of Material Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500712, Republic of Korea$$School of Material Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500712, Republic of KoreaSchool of Material Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500712, Republic of Korea$$

关键词: Power factor;    filtering effect;    stability;    doping;    conductivity;    grain size.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

In this paper, thermoelectric properties of nanoscaled In$_2$O$_3$:Sn films are considered. The limitations that may appear during the usage of such materials in devices developed for the market of thermoelectric generatorsand refrigerators are also analysed. It is shown that nanoscaled In$_2$O$_3$:Sn is a promising material for thermoelectric applications. It is also established that insufficient thermal stability of nanostructured materials is themain limitation of these materials application in high-temperature thermoelectric converters. Optimization of grain boundary parameters and the usage of specific surrounding atmosphere can significantly improve the efficiency of thermoelectric conversion of nanostructured materials in the region of intermediate temperatures.

【 授权许可】

Unknown