Effect of europium content on physical properties of In$_2$O$_3$ thin films for sensitivity and optoelectronic applications

Bulletin of materials science

A YUMAK¹  P PETKOVA¹  M AMLOUK¹  O KAMOUN¹  A BOUKHACHEM¹  K BOUBAKER¹  C MRABET¹ 

[1] Unité de Physique des Dispositifs à Semi-conducteurs, Faculté des Sciences de Tunis, Université de Tunis El Manar, 2092 Tunis, Tunisia$$Unité de Physique des Dispositifs à Semi-conducteurs, Faculté des Sciences de Tunis, Université de Tunis El Manar, 2092 Tunis, TunisiaUnité de Physique des Dispositifs à Semi-conducteurs, Faculté des Sciences de Tunis, Université de Tunis El Manar, 2092 Tunis, Tunisia$$

关键词: Indium oxide;    europium doping;    Raman spectroscopy;    PL measurement;    electrical behaviour.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

In$_2$O$_3$:Eu thin films were successfully grown by spray pyrolysis. XRD studies showed that the films had In$_2$O$_3$ cubic structure with (004) preferential orientation and best crystal properties at 1.5% Eu doping level. Theoptical band gap energy decreased with Eu content around 4.1 eV. Urbach energy was of the order of 278 meV, it decreased with Eu content which indicates a decrease in the defects by doping. The dispersion of the refractive index was discussed. Raman spectroscopy showed the band positions corresponding to In$_2$O$_3$ cubic phase with a small shift related to europium incorporation within In$_2$O$_3$ matrix. PL measurements showed a large band which was located at 410 nm and related to the band-to-band transitions and other bands related to impurity levels. Finally, theelectric conductivity was investigated depending on the effect of temperature. Activation energy was found to range from 45 to 60 meV for films which were prepared with 1%Eu content.

【 授权许可】

Unknown