Low-temperature localization in the transport properties of self-doped La$_{0.9}$Mn$_{0.98}$Zn$_{0.02}$O$_3$

Bulletin of materials science

K De¹  S Das² 

[1] Neotia Institute of Technology, Management and Science, Jhinga 743 368, India$$Neotia Institute of Technology, Management and Science, Jhinga 743 368, IndiaNeotia Institute of Technology, Management and Science, Jhinga 743 368, India$$;Department of Electronics and Communication Engineering, Guru Ghasidas Central University, Bilaspur (C.G.) 495 009, India$$Department of Electronics and Communication Engineering, Guru Ghasidas Central University, Bilaspur (C.G.) 495 009, IndiaDepartment of Electronics and Communication Engineering, Guru Ghasidas Central University, Bilaspur (C.G.) 495 009, India$$

关键词: Transport properties;    scattering mechanisms;    low temperature localization.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Low-temperature transport properties are investigated in the self-doped compound, La$_{0.9}$Mn$_{0.98}$Zn$_{0.02}$O$_3$. The analysis of the low-temperature resistivity is performed considering various scattering mechanisms. The parameters involved with different scattering processes such as electron�?�electron, Kondo, electron�?�phonon and electron�?�magnon are found to be strongly influenced by the applied magnetic field. The results suggest that interplay between electron�?�electron and Kondo-like scatterings lead to the localization in the temperature dependence of resistivity at low temperature.

【 授权许可】

Unknown