Bulletin of Materials Science | |
Low-temperature localization in the transport properties of self-doped La$_{0.9}$Mn$_{0.98}$Zn$_{0.02}$O$_3$ | |
关键词: Transport properties; scattering mechanisms; low temperature localization.; | |
学科分类:材料工程 | |
来源: Indian Academy of Sciences | |
【 摘 要 】
Low-temperature transport properties are investigated in the self-doped compound, La$_{0.9}$Mn$_{0.98}$Zn$_{0.02}$O$_3$. The analysis of the low-temperature resistivity is performed considering various scattering mechanisms. The parameters involved with different scattering processes such as electron–electron, Kondo, electron–phonon and electron–magnon are found to be strongly influenced by the applied magnetic field. The results suggest that interplay between electron–electron and Kondo-like scatterings lead to the localization in the temperature dependence of resistivity at low temperature.
【 授权许可】
CC BY
【 预 览 】
Files | Size | Format | View |
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RO201902188140024ZK.pdf | 1442KB | download |