Thermally assisted variable range hopping in Tl4S3Se crystal

Bulletin of materials science

N M Gasanly³  Abdelhalim M Ziqan²  Abdulftah H Mohammad²  A F Qasrawi¹ 

[1] Departments of Mathematics and Physics, Arab American University, Jenin 240, Palestine$$Group of Physics, Faculty of Engineering, Atilim University, 06836 Ankara, Turkey$$Departments of Mathematics and Physics, Arab American University, Jenin 240, PalestineDepartments of Mathematics and Physics, Arab American University, Jenin 240, Palestine$$Group of Physics, Faculty of Engineering, Atilim University, 06836 Ankara, Turkey$$Group of Physics, Faculty of Engineering, Atilim University, 06836 Ankara, TurkeyDepartments of Mathematics and Physics, Arab American University, Jenin 240, Palestine$$Group of Physics, Faculty of Engineering, Atilim University, 06836 Ankara, Turkey$$;Departments of Mathematics and Physics, Arab American University, Jenin 240, Palestine$$Departments of Mathematics and Physics, Arab American University, Jenin 240, PalestineDepartments of Mathematics and Physics, Arab American University, Jenin 240, Palestine$$;Department of Physics, Middle East Technical University, 06800 Ankara, Turkey$$Department of Physics, Middle East Technical University, 06800 Ankara, TurkeyDepartment of Physics, Middle East Technical University, 06800 Ankara, Turkey$$

关键词: Variable range hopping;    mixed conduction;    thermionic;    Tl4S3Se crystal.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

In this study, a modified model for the application of the thermionic and hopping current conduction mechanisms in the presence of continuous mixed conduction is investigated, discussed, experimented and simulated. It is observed that there exists a contribution from the hopping conductivity to the total conduction even at temperature ranges where the thermionic emission is mainly dominant. The contribution weight of a specific mechanism at particular temperature range is estimated. In addition, a modification to the Mott’s variable range hopping (VRH) transport parameters like density of localized state near the Fermi level, the average hopping range and the hopping energy in the presence of mixed conduction mechanism is also reported. This new approach corrects the evaluated electrical parameters that are necessary for the construction of electronic devices like absorption layers in solar cells. This proposed model is also used to explain the conduction mechanism and investigate the electrical conduction thermionic and Mott’s VRH parameters in Tl₄S₃Se crystals and in CuAlO₂ thin films.

【 授权许可】

Unknown