Morphological and electrical properties of SnS:Bi thin films

21st Latin American Symposium on Solid State Physics

Calderón, C.^1 ; Banguero, E.^1 ; Gordillo, G.^1

Departamento de Física, Universidad Nacional de Colombia, Bogotá, Colombia^1

关键词: Different mechanisms;    Electrical conductivity;    Electrical conductivity measurements;    Electrical transport;    Electrical transport properties;    Metallic precursor;    Soda lime glass substrate;    Variable range hopping;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/480/1/012004/pdf
DOI  :  10.1088/1742-6596/480/1/012004

来源: IOP

【 摘 要 】

This work presents results regarding the influence of the Bi content on the morphology and electrical transport properties of SnS:Bi thin films grown by sulfurization of the metallic precursors on a soda-lime glass substrate. The SnS:Bi films were characterized through atomic force microscopy and electrical conductivity measurements. The results showed that the Bi content affects the grain size and roughness of the SnS:Bi films. The grain size affects the carrier mobility and therefore the electrical conductivity at room temperature. Measurements of conductivity as a function of temperature, carried out in the range between 90K and 630K, revealed the electrical transport in SnS:Bi thin films is affected by two different mechanisms: at temperatures greater than 350K, the conductivity is predominantly affected by free carrier transport in extended states of the conduction/valence band, whereas at temperatures below 350K the conductivity is mainly determined by the variable range hopping transport mechanism.