Interface behaviour and electrical performance of ruthenium Schottky contact on 4H-SiC after argon annealing

Bulletin of materials science

Sergio M M Coelho¹  Chris Theron¹  Kinnock V munthali²  F Danie Auret¹ 

[1] Department of Physics, University of Pretoria, Pretoria 0002, South Africa$$Department of Physics, University of Pretoria, Pretoria 0002, South AfricaDepartment of Physics, University of Pretoria, Pretoria 0002, South Africa$$;Department of Physics, University of Pretoria, Pretoria 0002, South Africa$$Department of Mathematics, Science and Sports Education, University of Namibia, HP Campus, P/Bag 5507, Oshakati, Namibia$$Department of Physics, University of Pretoria, Pretoria 0002, South AfricaDepartment of Physics, University of Pretoria, Pretoria 0002, South Africa$$Department of Mathematics, Science and Sports Education, University of Namibia, HP Campus, P/Bag 5507, Oshakati, Namibia$$Department of Mathematics, Science and Sports Education, University of Namibia, HP Campus, P/Bag 5507, Oshakati, NamibiaDepartment of Physics, University of Pretoria, Pretoria 0002, South Africa$$Department of Mathematics, Science and Sports Education, University of Namibia, HP Campus, P/Bag 5507, Oshakati, Namibia$$

关键词: Rutherford backscattering spectrometry;    Raman spectroscopy;    oxidation;    silicide;    Schottky barrier diodes;    ruthenium;    4H-SiC.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Rutherford backscattering spectrometry (RBS) analysis, carried out at various annealing temperatures, of a thin film of ruthenium on n-type four-hexagonal silicon carbide (4H-SiC) showed the evidence of ruthenium oxidation, ruthenium silicide formation and diffusion of ruthenium into silicon carbide starting from an annealing temperature of 400° C. Ruthenium oxidation was more pronounced, and ruthenium and silicon interdiffusion was very deep after annealing at 800° C. Raman analysis of some samples also showed ruthenium silicide formation and oxidation. The Schottky barrier diodes showed very good linear capacitance�?�voltage characteristics and excellent forward current�?�voltage characteristics, despite the occurrence of the chemical reactions and interdiffusion of ruthenium and silicon at ruthenium�?�silicon�?�carbide interface, up to an annealing temperature of 800° C.

【 授权许可】

Unknown