Bulletin of materials science | |
Interface behaviour and electrical performance of ruthenium Schottky contact on 4H-SiC after argon annealing | |
Sergio M M Coelho1  Chris Theron1  Kinnock V munthali2  F Danie Auret1  | |
[1] Department of Physics, University of Pretoria, Pretoria 0002, South Africa$$Department of Physics, University of Pretoria, Pretoria 0002, South AfricaDepartment of Physics, University of Pretoria, Pretoria 0002, South Africa$$;Department of Physics, University of Pretoria, Pretoria 0002, South Africa$$Department of Mathematics, Science and Sports Education, University of Namibia, HP Campus, P/Bag 5507, Oshakati, Namibia$$Department of Physics, University of Pretoria, Pretoria 0002, South AfricaDepartment of Physics, University of Pretoria, Pretoria 0002, South Africa$$Department of Mathematics, Science and Sports Education, University of Namibia, HP Campus, P/Bag 5507, Oshakati, Namibia$$Department of Mathematics, Science and Sports Education, University of Namibia, HP Campus, P/Bag 5507, Oshakati, NamibiaDepartment of Physics, University of Pretoria, Pretoria 0002, South Africa$$Department of Mathematics, Science and Sports Education, University of Namibia, HP Campus, P/Bag 5507, Oshakati, Namibia$$ | |
关键词: Rutherford backscattering spectrometry; Raman spectroscopy; oxidation; silicide; Schottky barrier diodes; ruthenium; 4H-SiC.; | |
DOI : | |
学科分类:材料工程 | |
来源: Indian Academy of Sciences | |
【 摘 要 】
Rutherford backscattering spectrometry (RBS) analysis, carried out at various annealing temperatures, of a thin film of ruthenium on n-type four-hexagonal silicon carbide (4H-SiC) showed the evidence of ruthenium oxidation, ruthenium silicide formation and diffusion of ruthenium into silicon carbide starting from an annealing temperature of 400° C. Ruthenium oxidation was more pronounced, and ruthenium and silicon interdiffusion was very deep after annealing at 800° C. Raman analysis of some samples also showed ruthenium silicide formation and oxidation. The Schottky barrier diodes showed very good linear capacitance�?�voltage characteristics and excellent forward current�?�voltage characteristics, despite the occurrence of the chemical reactions and interdiffusion of ruthenium and silicon at ruthenium�?�silicon�?�carbide interface, up to an annealing temperature of 800° C.
【 授权许可】
Unknown
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