Application of the ion mixing method for doping near surface layers of the silicon single crystals

2nd International Telecommunication Conference "Advanced Micro- and Nanoelectronic Systems and Technologies"

Volkov, N.^1 ; Kalin, B.^1 ; Voronov, Yu.^1 ; Pershenkov, V.^1

National Research Nuclear University MEPhI, Moscow Engineering Physics Institute, Kashirskoe shosse 31, Moscow

115409, Russia^1

关键词: Atom distribution;    Evaporated films;    Experimental conditions;    Interstitial sites;    Isotropic models;    Near-surface layers;    Rutherford backscattering spectrometry;    Silicon single crystals;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/498/1/012025/pdf
DOI  :  10.1088/1757-899X/498/1/012025

来源: IOP

【 摘 要 】

Penetration of alien atoms (Be, Al, Ni, Mo) into Si, diamond monocrystals substrates was investigated under Ar+ ion bombardment of samples having thermally evaporated films of 30-50 nm. Sputtering was carried out using a wide energy spectrum beam of Ar+ ions with mean energy 9.4 keV to dose D = 1×1016-1019 ion/cm2. Implanted atom distribution in the targets was measured by Rutherford backscattering spectrometry (RBS) of H+ and He+ ions with start energy of 1.6 MeV as well as secondary ion mass-spectrometry (SIMS). During the bombardment, the penetration depth of Ar atoms increases with dose linearly. This depth is more than 3-20 times deeper than the projected range of bombarding ions and recoil atoms. This is a "ion mixing" process. The analysis shows that the experimental data for foreign atoms penetration depth are similar to the data calculated for atom migration through the interstitial site in a field of internal (lateral) compressive stresses created in the near-surface layer of the substrate as a result of implantation. Under these experimental conditions atom ratio r i/r m (r i - radius of dopant atom, r m - radius of substrate atom) can play a principal determining role. Show that maximum penetration depth of the film atoms in the substrates may be determine by "isotropic model" under ion beam (with wide energy spectrum - polyenergy) irradiation of the "film-substrate" systems too.