Bipolar resistive switching behaviours in ZnMn2O4 film deposited on p+-Si substrate by chemical solution deposition

Bulletin of materials science

Hua Wang³  Zupei Yang¹  Xiaowen Zhang³  Jiwen Xu²  Yupei Zhang³ 

[1] School of Material Science and Engineering, Shaanxi Normal University, Xi’an 710062, P R China$$School of Material Science and Engineering, Shaanxi Normal University, Xi’an 710062, P R ChinaSchool of Material Science and Engineering, Shaanxi Normal University, Xi’an 710062, P R China$$;School of Material Science and Engineering, Shaanxi Normal University, Xi’an 710062, P R China$$School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, P R China$$School of Material Science and Engineering, Shaanxi Normal University, Xi’an 710062, P R ChinaSchool of Material Science and Engineering, Shaanxi Normal University, Xi’an 710062, P R China$$School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, P R China$$School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, P R ChinaSchool of Material Science and Engineering, Shaanxi Normal University, Xi’an 710062, P R China$$School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, P R China$$;School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, P R China$$School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, P R ChinaSchool of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, P R China$$

关键词: ZnMn2O4;    bipolar;    resistive switching;    chemical solution deposition.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

ZnMn₂O₄ active layer for resistance random access memory (RRAM) was deposited on p⁺-Si substrate by chemical solution deposition. The bipolar resistive switching behaviours of the Ag/ZnMn₂O₄/p⁺-Si capacitor are investigated. The bipolar resistive switching is reproducible and shows high ON/OFF ratio of > 10² and long retention times of > 10⁵ s. The conduction mechanism of the Ag/ZnMn₂O₄/p⁺-Si capacitor in the low-resistance state (LRS) is ohmic conduction, whereas that of the device in high-resistance state (HRS) successively undergoes Ohm’s law, trap-filled-limited and Child’s law conduction procedure at room temperature.

【 授权许可】

Unknown