Bipolar resistive switching behaviours in ZnMn2O4 film deposited on p+-Si substrate by chemical solution deposition

Bulletin of Materials Science

关键词: ZnMn2O4;    bipolar;    resistive switching;    chemical solution deposition.;   

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

ZnMn2O4 active layer for resistance random access memory (RRAM) was deposited on p+-Si substrate by chemical solution deposition. The bipolar resistive switching behaviours of the Ag/ZnMn2O4/p+-Si capacitor are investigated. The bipolar resistive switching is reproducible and shows high ON/OFF ratio of > 102 and long retention times of > 105 s. The conduction mechanism of the Ag/ZnMn2O4/p+-Si capacitor in the low-resistance state (LRS) is ohmic conduction, whereas that of the device in high-resistance state (HRS) successively undergoes Ohm’s law, trap-filled-limited and Child’s law conduction procedure at room temperature.

【 授权许可】

CC BY