In𝑥Ga1−ð�?�¥N fibres grown on Au/SiO2 by chemical vapour deposition

Bulletin of materials science

M Barboza-Flores¹  R Rangel³  R García¹  A Ramos-Carrazco² 

[1] Departamento de Investigación en Física de la Universidad de Sonora, Hermosillo, Sonora, C.P. 83000, México$$Departamento de Investigación en Física de la Universidad de Sonora, Hermosillo, Sonora, C.P. 83000, MéxicoDepartamento de Investigación en Física de la Universidad de Sonora, Hermosillo, Sonora, C.P. 83000, México$$;Centro de Investigación en Materiales Avanzados, S.C., Chihuahua, Chihuahua, C.P. 31108, México$$Departamento de Física, Universidad de Sonora, Hermosillo, Sonora, C.P. 83000, México$$Centro de Investigación en Materiales Avanzados, S.C., Chihuahua, Chihuahua, C.P. 31108, MéxicoCentro de Investigación en Materiales Avanzados, S.C., Chihuahua, Chihuahua, C.P. 31108, México$$Departamento de Física, Universidad de Sonora, Hermosillo, Sonora, C.P. 83000, México$$Departamento de Física, Universidad de Sonora, Hermosillo, Sonora, C.P. 83000, MéxicoCentro de Investigación en Materiales Avanzados, S.C., Chihuahua, Chihuahua, C.P. 31108, México$$Departamento de Física, Universidad de Sonora, Hermosillo, Sonora, C.P. 83000, México$$;Facultad de Ingeniería Química, Universidad Michoacana de San Nicolás de Hidalgo, Morelia, Michoacán, C.P. 58030, México$$Facultad de Ingeniería Química, Universidad Michoacana de San Nicolás de Hidalgo, Morelia, Michoacán, C.P. 58030, MéxicoFacultad de Ingeniería Química, Universidad Michoacana de San Nicolás de Hidalgo, Morelia, Michoacán, C.P. 58030, México$$

关键词: Nitride of group-III;    indiumâ€�?�gallium nitride;    chemical vapour deposition.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

The growth of In_ð‘�?Ga_{1−ð�?��?}N films (ð‘�? = 0.1 and ð‘�? = 0.2) on a thin gold layer (Au/SiO₂) by chemical vapour deposition (CVD) at 650 °C is reported. As a novelty, the use of a Gaâ€�?�In metallic alloy to improve the indium incorporation in the In_ð‘�?Ga_{1−ð�?��?}N is proposed. The results of high quality In_ð‘�?Ga_{1−ð�?��?}N films with a thickness of three micrometres and the formation of microfibres on the surface are presented. A morphological comparison between the In_ð‘�?Ga_{1−ð�?��?}N and GaN films is shown as a function of the indium incorporation. The highest crystalline In_ð‘�?Ga_{1−ð�?��?}N films structure was obtained with an indium composition of ð‘�? = 0.20. Also, the preferential growth on the (002) plane over In_0.2Ga_0.8N was observed by means of X-ray diffraction. The thermoluminescence (TL) of the In_ð‘�?Ga_{1−ð�?��?}N films after beta radiation exposure was measured indicating the presence of charge trapping levels responsible for a broad TL glow curve with a maximum intensity around 150 °C. The TL intensity was found to depend on composition being higher for ð‘�? = 0.1 and increases as radiation dose increases.

【 授权许可】

Unknown