Influence of growth temperature on morphological, structural and photoluminescence properties of ZnO nanostructure thin layers and powders deposited by thermal evaporation

Bulletin of materials science

Yaser Arjmand¹  Hosein Eshghi¹ 

[1] Department of Physics, University of Shahrood, Shahrood 36155-316, Iran$$Department of Physics, University of Shahrood, Shahrood 36155-316, IranDepartment of Physics, University of Shahrood, Shahrood 36155-316, Iran$$

关键词: ZnO;    thin film;    nanocrystalline material;    thermal evaporation;    photoluminescence.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Zinc oxide (ZnO) nanostructures were grown as thin films on the p-silicon (100) wafer and also in the form of powder inside the boat by heating (550�??950 °C) zinc powder in the presence of oxygen without any catalyst or additives, using the thermal evaporation method. The field-emission scanning electron microscopy images, as well as energy-dispersive X-ray spectroscopy and X-ray diffraction spectra, indicate that although the grown samples are covered with various nanostructure shapes, such as nanowires, nanorods, flower-like nanostructures andmicrocages, all have a reasonable stoichiometric composition in the polycrystalline wurtzite phase along (002) in the thin layer samples and along (101) in the powder samples within the boat. The room-temperature photoluminescence spectra of the thin layer samples revealed not only the ultraviolet (UV) emission blue shift of the samples with an increase in the growth temperature, but also found that the emission intensity ratio of UV/visible (∼510 nm) has a maximum and minimum, corresponding to that grown at 750 and 950 °C, respectively.

【 授权许可】

Unknown