Phase transitions and their co-existence in TlGaSe2�?�TlCrS2(Se2) systems

Bulletin of materials science

E M Kerimova¹  N Z Gasanov¹  R Z Sadykhov¹  Yu G Asadov¹  Mir Hasan Yu Seyidov²  R G Veliyev¹  F M Seyidov¹ 

[1] Institute of Physics, Azerbaijan National Academy of Sciences, Az 1143, Baku, Azerbaijan$$Institute of Physics, Azerbaijan National Academy of Sciences, Az 1143, Baku, AzerbaijanInstitute of Physics, Azerbaijan National Academy of Sciences, Az 1143, Baku, Azerbaijan$$;Institute of Physics, Azerbaijan National Academy of Sciences, Az 1143, Baku, Azerbaijan$$Department of Physics, Gebze Institute of Technology, Gebze 41400, Kocaeli, Turkey$$Institute of Physics, Azerbaijan National Academy of Sciences, Az 1143, Baku, AzerbaijanInstitute of Physics, Azerbaijan National Academy of Sciences, Az 1143, Baku, Azerbaijan$$Department of Physics, Gebze Institute of Technology, Gebze 41400, Kocaeli, Turkey$$Department of Physics, Gebze Institute of Technology, Gebze 41400, Kocaeli, TurkeyInstitute of Physics, Azerbaijan National Academy of Sciences, Az 1143, Baku, Azerbaijan$$Department of Physics, Gebze Institute of Technology, Gebze 41400, Kocaeli, Turkey$$

关键词: Crystal growth;    dielectric properties;    ferroelectrics;    ferromagnets;    magnetic properties.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Investigation of dielectric properties of layered compound, TlGaSe₂, showed that it is a ferroelectric (ð‘�??_c = 105.5 K) with an intermediate incommensurate phase (ð‘�??_i = 114.5 K). Our magnetic studies of layered compounds, TlCrS₂ and TlCrSe₂, for the first time revealed that the magnetic phase transition in these compounds are quasi two-dimensional ferromagnetic in nature and magnetic characteristics are ð‘�??_c = 90 K, $T^{p}_{C}$ = 115 K, ðœ�?_eff = 3.26 ðœ�?_B and ð‘�??_c = 105 K, $T^{p}_{C}$ = 120 K, ðœ�?_eff = 3.05 ðœ�?_B, respectively. Using the method of DTA, areas of homogeneous and heterogeneous coexistence of ferroelectric and ferromagnetic phase transitions in the systems, TlGaSe₂â€�?�TlCrS₂ and TlGaSe₂â€�?�TlCrSe₂, were identified. The low-dimensional solid solutions and eutectic alloys in these systems can be used as basic materials for plenty of functional recorders.

【 授权许可】

Unknown