Hybrid orientation technology and strain engineering for ultra-high speed MOSFETs

Bulletin of materials science

T K Maiti¹  C K Maiti¹ 

[1] Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721 302, India$$Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721 302, IndiaDepartment of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721 302, India$$

关键词: Hybrid orientation technology;    technology CAD;    process-induced strain;    CMOS integrated circuits;    mobility;    strained-Si.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

We report here RF MOSFET performance in sub-45-nm hybrid orientation CMOS technology. Based on the combination of hybrid orientation technology (HOT) and process-induced local strain engineering,MOSFET RF performance is investigated using CAD (TCAD) technology. Transistor optimization on (100) substrate via silicon nitride (Si₃N₄) cap layer thickness for ð‘�??-MOSFETs, Ge mole fraction optimization for ð‘�?-MOSFETs on (110) substrates and channel length scaling have resulted in record RF performance, viz. the cut-off frequency, ð‘�??_T.

【 授权许可】

Unknown