Voltage stress-induced performance degradation in NMOSFET mixer

IEICE Electronics Express

C. Yu³  H. Yang¹  E. Xiao²  J. S. Yuan³ 

[1] Freescale Systems;University of Texas at Arlington;University of Central Florida

关键词: CMOS integrated circuits;    hot carrier;    stress;    noise;    gain;    linearity;   

DOI  :  10.1587/elex.2.133

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(7)Cited-By(1)This paper presents an insight into the performance degradation in Gilbert mixer due to the voltage stress-induced hot carrier effects. Analytical analysis relates the performance degradation with the model parameter shifts caused by voltage stress. The stress-induced parameter shifts are examined experimentally. Performance degradation in mixer is investigated through Spectre-RF simulation with the models extracted from measured data.

【 授权许可】

Unknown