Aerosol assisted chemical vapour deposition of germanium thin films using organogermanium carboxylates as precursors and formation of germania films

Bulletin of materials science

S Bhattacharya²  Vijaykumar S Sagoria¹  Amey Wadawale¹  Alpa Y Shah¹  Vimal K Jain¹  C A Betty¹ 

[1] Chemistry Division, Bhabha Atomic Research Centre, Mumbai 400 085, India$$Chemistry Division, Bhabha Atomic Research Centre, Mumbai 400 085, IndiaChemistry Division, Bhabha Atomic Research Centre, Mumbai 400 085, India$$;Technical Physics Division, Bhabha Atomic Research Centre, Mumbai 400 085, India$$Technical Physics Division, Bhabha Atomic Research Centre, Mumbai 400 085, IndiaTechnical Physics Division, Bhabha Atomic Research Centre, Mumbai 400 085, India$$

关键词: Organogermanium;    germanium thin films;    AACVD;    XRD.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Diethyl germanium bis-picolinate, [Et₂Ge(O₂CC₅H₄N)₂], and trimethyl germanium quinaldate, [Me₃Ge(O₂CC₉H₆N)], have been used as precursors for deposition of thin films of germanium by aerosol assisted chemical vapour deposition (AACVD). The thermogravimetric analysis revealed complete volatilization of complexes under nitrogen atmosphere. Germanium thin films were deposited on silicon wafers at 700°C employing AACVD method. These films on oxidation under an oxygen atmosphere at 600°C yield GeO₂. Both Ge and GeO₂ films were characterized by XRD, SEM and EDS measurements. Their electrical properties were assessed by currentâ€�?�voltage (𝐼â€�?�ð�?��??) characterization.

【 授权许可】

Unknown