Effect of thin Mo2C layer on thermal stability of Si/SiO2/Ti/Cu system

Bulletin of materials science

Mukesh Kumar¹  Dinesh Kumar¹  C C Tripathi¹ 

[1] Electronic Science Department, Kurukshetra University, Kurukshetra 136 119, India$$Electronic Science Department, Kurukshetra University, Kurukshetra 136 119, IndiaElectronic Science Department, Kurukshetra University, Kurukshetra 136 119, India$$

关键词: Bi-layer;    diffusion barrier;    titanium;    molybdenum carbide;    thermal stability.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

The effect of introducing a thin Mo₂C (30 nm) layer between Ti and Cu on the thermal stability of Si/SiO₂/Ti/Cu system was studied using four-point probe (FPP), scanning electron microscopy (SEM), energydispersive X-ray spectroscopy (EDAX) and X-ray diffraction (XRD) techniques. The measured value of the sheet resistance in the bi-layered diffusion barrier structure does not show any change up to an annealing temperature of 750°C. The sheet resistance when measured after annealing at 800°C marginally increases but less than twice its value at room temperature. The XRD analysis indicated no copper diffusion and the formation of Cu₃Si phase up to 800°C. The bi-layered barrier structure annealed at elevated temperature shows copper-depleted and agglomerated regions. The sheet resistance measurement, study of surface morphology and the XRD analysis confirm that the insertion of thin Mo₂C layer increases the thermal stability of the system from 400°C to 750°C. The increased thermal stability of the system is ascribed to longer diffusion path length in the bi-layered system probably because of grain boundaries mismatch at Tiâ€�?�Mo₂C interface.

【 授权许可】

Unknown