Self-assembled flower-like nanostructures of InN and GaN grown by plasma-assisted molecular beam epitaxy

Bulletin of materials science

T N Bhat³  Mahesh Kumar⁵  S B Krupanidhi³  L M Kukreja²  P Misra²  B Roul⁵  Neeraj Sinha¹  A T Kalghatgi⁴  M K Rajpalke³ 

[1] Office of Principal Scientific Advisor, Government of India, New Delhi 110 011, India$$Office of Principal Scientific Advisor, Government of India, New Delhi 110 011, IndiaOffice of Principal Scientific Advisor, Government of India, New Delhi 110 011, India$$;Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013, India$$Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013, IndiaLaser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013, India$$;Materials Research Centre, Indian Institute of Science, Bangalore 560 012, India$$Materials Research Centre, Indian Institute of Science, Bangalore 560 012, IndiaMaterials Research Centre, Indian Institute of Science, Bangalore 560 012, India$$;Central Research Laboratory, Bharat Electronics, Bangalore 560 013, India$$Central Research Laboratory, Bharat Electronics, Bangalore 560 013, IndiaCentral Research Laboratory, Bharat Electronics, Bangalore 560 013, India$$;Materials Research Centre, Indian Institute of Science, Bangalore 560 012, India$$Central Research Laboratory, Bharat Electronics, Bangalore 560 013, India$$Materials Research Centre, Indian Institute of Science, Bangalore 560 012, IndiaMaterials Research Centre, Indian Institute of Science, Bangalore 560 012, India$$Central Research Laboratory, Bharat Electronics, Bangalore 560 013, India$$Central Research Laboratory, Bharat Electronics, Bangalore 560 013, IndiaMaterials Research Centre, Indian Institute of Science, Bangalore 560 012, India$$Central Research Laboratory, Bharat Electronics, Bangalore 560 013, India$$

关键词: Nitrides;    nano-flowers;    photoluminescence;    RFâ€�?�MBE.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Nanosized hexagonal InN flower-like structures were fabricated by droplet epitaxy on GaN/Si(111) and GaN flower-like nanostructure fabricated directly on Si(111) substrate using radio frequency plasma-assisted molecular beam epitaxy. Powder X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to study the crystallinity and morphology of the nanostructures. Moreover, X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) were used to investigate the chemical compositions and optical properties of nano-flowers, respectively. Activation energy of free exciton transitions in GaN nano-flowers was derived to be ∼ 28.5 meV from the temperature dependent PL studies. The formation process of nanoflowers is investigated and a qualitative mechanism is proposed.

【 授权许可】

Unknown