Bulletin of Materials Science | |
Self-assembled flower-like nanostructures of InN and GaN grown by plasma-assisted molecular beam epitaxy | |
关键词: Nitrides; nano-flowers; photoluminescence; RF–MBE.; | |
学科分类:材料工程 | |
来源: Indian Academy of Sciences | |
【 摘 要 】
Nanosized hexagonal InN flower-like structures were fabricated by droplet epitaxy on GaN/Si(111) and GaN flower-like nanostructure fabricated directly on Si(111) substrate using radio frequency plasma-assisted molecular beam epitaxy. Powder X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to study the crystallinity and morphology of the nanostructures. Moreover, X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) were used to investigate the chemical compositions and optical properties of nano-flowers, respectively. Activation energy of free exciton transitions in GaN nano-flowers was derived to be ∼ 28.5 meV from the temperature dependent PL studies. The formation process of nanoflowers is investigated and a qualitative mechanism is proposed.
【 授权许可】
CC BY
【 预 览 】
Files | Size | Format | View |
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RO201902189076518ZK.pdf | 871KB | download |