Properties of Nb-doped ZnO transparent conductive thin films deposited by rf magnetron sputtering using a high quality ceramic target

Bulletin of materials science

H Wang¹  M H Jiang¹  X Y Liu¹  J W Xu¹ 

[1] Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, China$$Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, ChinaGuangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, China$$

关键词: ZnO films;    Nb-doped;    magnetron sputtering;    optical and electrical properties.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Nb-doped ZnO films with (002) orientation have been grown on glass substrates by rf magnetron sputtering followed by vacuum annealing at 400°C for 3 h. The microstructures and surface figures of the Nbdoped ZnO films were investigated with X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. And its optical and electrical properties were measured at room temperature using a four-point probe technique and 756-type spectrophotometer, respectively. X-ray diffraction (XRD) revealed that the films are highly textured along the �? axis and perpendicular to the surface of the substrate. After annealing at 400°C for 180 min under vacuum, transmittance of about 90% in visible region for Nb doped ZnO films was confirmed by the optical transmission spectra, and the low resistivity of 5.47 �? 10^-3 �?.cm was obtained.

【 授权许可】

Unknown