Influence of microgravity on Ce-doped Bi12SiO20 crystal defect

Bulletin of materials science

L D Chen²  Y Liu²  Y F Zhou²  J Y Xu²  W X Huang¹  Y Y Huang¹ 

[1] Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China$$Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, ChinaInstitute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China$$;Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China$$Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, ChinaShanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China$$

关键词: Oxides;    crystal growth;    microgravity;    dislocation.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Space grown BSO crystal doped with Ce was characterized by means of X-ray fluorescence spectra, X-ray topography, dislocation density etc. Influence of microgravity on Ce-doped BSO crystal defect was studied by comparing space grown BSO crystal with ground grown one. These results show that compositional homogeneity and structural perfection of crystal can be improved under microgravity conditions.

【 授权许可】

Unknown