Synthesis of B�?�Sb by rapid thermal annealing of B/Sb multilayer films

Bulletin of materials science

A K Pal¹  S N Das¹ 

[1] Department of Instrumentation Science, Jadavpur University, Kolkata 700 032, India$$Department of Instrumentation Science, Jadavpur University, Kolkata 700 032, IndiaDepartment of Instrumentation Science, Jadavpur University, Kolkata 700 032, India$$

关键词: IIIâ€�?�V Compound;    optical property;    XPS.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Group III�?�V compound B�?�Sb films were synthesized from B/Sb/�?/B multilayer films deposited by electron gun evaporation onto silicon substrate and subjecting the above multilayer to rapid thermal annealing at 773 K for 3 min. The films were characterized by XRD, TEM, XPS and optical studies. XPS studies indicated the ratio of B : Sb ∼1. XRD and electron diffraction patterns indicated the reflections from (100), (111), (102) and (112) planes of zinc blende BSb. Band gap evaluated from optical studies was ∼ 0.51 eV. Refractive index of the films varied between 1.65 and 2.18 with increasing energy of incident photon and plasma frequency (�?_p) was estimated to be ∼ 2.378 �? 10^-14 s^-1. The effective mass was computed to be ∼ 0.0845 m_�??.

【 授权许可】

Unknown