CVD growth and characterization of 3C-SiC thin films

Bulletin of materials science

S Varma²  D Paramanik²  C Jacob¹  A Gupta¹ 

[1] Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302, India$$Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302, IndiaMaterials Science Centre, Indian Institute of Technology, Kharagpur 721 302, India$$;Institute of Physics, Bhubaneswar 751 005, India$$Institute of Physics, Bhubaneswar 751 005, IndiaInstitute of Physics, Bhubaneswar 751 005, India$$

关键词: 3C-SiC;    HMDS;    CVD;    selective epitaxy.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Cubic silicon carbide (3C-SiC) thin films were grown on (100) and (111) Si substrates by CVD technique using hexamethyldisilane (HMDS) as the source material in a resistance heated furnace. HMDS was used as the single source for both Si and C though propane was available for the preliminary carbonization. For selective epitaxial growth, patterned Si (100) substrates were used. The effect of different growth parameters such as substrate orientation, growth temperature, precursor concentration, etc on growth was examined to improve the film quality. The surface morphology, microstructure and crystallinity of grown films were studied using optical microscopy, scanning electron microscopy (SEM), X-ray diffraction (XRD) analysis and X-ray photoelectron spectroscopy (XPS).

【 授权许可】

Unknown